产品信息
CategoriesDiscrete Semiconductor Products > Transistors - FETs, MOSFETs - SingleSeriesHEXFET®PackagingTubePart StatusActiveFET TypeP-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)55VCurrent - Continuous Drain (Id) @ 25°C31A (Tc)Drive Voltage (Max Rds On, Min Rds On)10VVgs(th) (Max) @ Id4V @ 250μAGate Charge (Qg) (Max) @ Vgs63nC @ 10VInput Capacitance (Ciss) (Max) @ Vds1200pF @ 25VVgs (Max)±20VFET Feature-Power Dissipation (Max)110W (Tc)Rds On (Max) @ Id, Vgs60 mOhm @ 16A, 10VOperating Temperature-55°C ~ 175°C (TJ)Mounting TypeThrough HoleSupplier Device PackageTO-220ABPackage / CaseTO-220-3
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